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Designing a Power Model for NAND Flash Memory
Abstract
Energy storage enhancements can facilitate the achievement of global carbon reduction targets. Effective storage is necessary to ensure a consistent supply of energy derived from solar and wind sources, given the inherent variability of these sources. Super capacitors (SCs), also referred to as electrochemical capacitors, are recognized as pivotal in addressing this challenge.
The advancement in electronics technology has resulted in the fabrication and manufacturing of new materials in a smaller lattice space. Various conductive materials such as copper, carbon fiber, silver, graphene, and ferrites are now accessible in filament form. These filaments simplify the fabrication of electronic devices using current additive manufacturing techniques with minimal adjustments.
Flash memories, non-volatile memories based on floating-gate transistors, do not require power to retain data. NAND Flash, a popular solid-state memory storage technology, connects several transistors in series, pulling a bit line low only when all word lines are in a high state. Most electronic gadgets utilize flash memory for storage, increasingly replacing hard disk drives in servers, desktops, and laptops.
This paper develops a power model for NAND memory, validating theoretical values with test results. Parameters such as current, voltage, and timing are measured across NAND and controller sides of Solid State Drives. The power model is designed to calculate power dissipation during read, write, and erase operations of NAND memory. While vendors offer a power model for SDRAM, there is currently no readily available power model for NAND flash memories.
The aim of this analysis is to provide a comprehensive overview of the contributions made by researchers worldwide to the journal Electronics between 2012 and 2020. This study seeks to establish a global perspective on the topics covered in the journal, as well as their significance, advancements, and notable developments that have influenced subsequent research.References
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