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Design of Absorptive Bandstop Filter using 180nm Bi-CMOS Technology

G S Nimitha, Madan G, Krishna Murthy R Adiga, Sai Dhanya U

Abstract


Wideband communications, radar, and sensing applications are becoming increasingly popular due to the development of software-defined wideband amplifiers, ADCs, DACs, and radios. For these applications it is often necessary to minimize the amount and magnitude of harmonics with the spurious content of the transmitter signal while maintaining the best possible dynamic range and sensitivity in the receiver signal. It has been found that radio waves cause reflections of RF power as they pass through a notch filter, which can damage previous stages of operation. An integrated absorption/reflection notch filter is implemented in this project. Since it has both CMOS transistor and bipolar junction transistor characteristics, we use Bi-CMOS technology to achieve this. Bi-CMOS works faster and consumes less power. Using 180nm technology and LTSpice software, we will combine these technologies into a single chip. It has been determine

d that the bandstop filter has a center frequency of 315MHz, a bandwidth of 14MHz and a quality factor of 22.5. Close agreement between the theoretical and simulated results for this integrated absorptive bandstop filter is achieved.


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References


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