Novel Approach to Suppress Crosstalk in Through-Silicon Vias

Abstract

This research presents a novel technique for reducing crosstalk in ternary coupled through-silicon vias (TSVs). The study evaluates crosstalk effects in TSVs that utilize metallic liners made of multi-walled carbon nanotubes (MWCNTs) alongside dielectric liners composed of polymers such as polyimide, polypropylene carbonate (PPC), and benzo cyclobutene (BCB). To investigate various crosstalk challenges, a circuit model of coupled TSVs driven by a ternary inverter is developed. The proposed TSV designs are analyzed using the HSPICE simulation tool. A comparative study is conducted to assess the crosstalk behavior in MWCNT-based TSVs against single-walled carbon nanotube (SWCNT) TSVs. Additionally, key performance parameters, including power consumption, power-delay product (PDP), and energy-delay product (EDP), are evaluated against SWCNT-based TSVs. The study also examines the influence of TSV pitch variations on system performance. Notably, at increased pitch values, coupled TSVs incorporating BCB dielectric liners exhibit superior performance. Specifically, with a TSV pitch of 5000 μm, BCB-based TSV structures achieve up to a 40.03% performance improvement compared to SWCNT TSVs.