Advancing 3D IC Integration Using BCB as a Dielectric Material

Abstract

The increasing demand for compact, high-performance electronic devices has driven advancements in semiconductor technology. Traditional two-dimensional integrated circuits (ICs) face limitations due to long metal interconnects, which introduce RC delays and hinder communication bandwidth. Three-dimensional integrated circuits (3D ICs) address these challenges by vertically stacking functional modules interconnected through Through-Silicon Vias (TSVs). While TSVs enhance signal transmission, they also introduce noise coupling between signal-carrying (aggressor) and ground (victim) TSVs, degrading signal integrity. Effective liner materials are essential to mitigate this issue, with Benzocyclobutene (BCB) emerging as a superior dielectric solution. Compared to conventional SiO₂ and Teflon AF 1600, BCB offers a lower dielectric constant, minimal parasitic capacitance, and improved thermal stability. This study evaluates a dielectric-metal-dielectric structure around copper TSVs, demonstrating that BCB reduces noise coupling by 0.87 dB at terahertz (THz) frequencies. These findings highlight BCB’s potential in enhancing 3D IC performance, enabling higher-speed, energy-efficient, and compact electronic devices. Integrating BCB as a dielectric material paves the way for future advancements in semiconductor technology, ensuring better signal integrity and reduced electromagnetic interference in next-generation microelectronics.