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Peak Overshoot Analysis of On-Chip Interconnects for Different Technologies

C. VENKATAIAH, Anchula Sathish, N. Ramanjaneyulu, Y. Mallikarjuna Rao

Abstract


As we extended from deep sub-micron technology to nanometer regimes, the conventional Cu wire will not be able to continue. So, substitute approaches such as Carbon Nano Tube (CNT) interconnects have been suggested to ignore the problems associated with global interconnects. Hence in this work, crosstalk analysis of CMOS buffer-driven of different interconnects have been analyzed for peak overshoot and overshoot width of Cu and CNTs for different technologies. For analyzing peak overshoot, we have varied the interconnect lengths from 100µm to 500µm for different technology nodes for Cu, SWCNT and MWCNT. The values of the peak overshoot and overshoot width changes, as the interconnect length increases, the peak overshoot and width is going to be increases. As Compared to Cu, SWCNT and MWCNT, the peak overshoot for SWCNT is lesser than copper and MWCNT. The MWCNT interconnect is less than that of conventional Copper interconnects.

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References


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