Analysis of Scaling Effects and Low Power Techniques in Deep Submicron VLSI Design
Abstract
References
R. H. Dennard et al., “Design of Ion-Implanted MOSFETs with Very Small Physical Dimensions,” IEEE Journal of Solid-State Circuits, Vol. 9, No. 5, pp. 256–268, 1974. DOI: 10.1109/JSSC.1974.1050511.
G. E. Moore, “Cramming More Components onto Integrated Circuits,” Electronics, Vol. 38, No. 8, pp. 114–117, 1965. DOI: 10.1109/N-SSC.2006.4785860.
K. Roy, S. Mukhopadhyay, H. Mahmoodi-Meimand, “Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits,” Proceedings of the IEEE, Vol. 91, No. 2, pp. 305–327, 2003. DOI: 10.1109/JPROC.2002.808156.
S. Borkar, “Design Challenges of Technology Scaling,” IEEE Micro, Vol. 19, No. 4, pp. 23–29, 1999. DOI: 10.1109/40.782564.
T. Sakurai, A. R. Newton, “Alpha-Power Law MOSFET Model,” IEEE Journal of Solid-State Circuits, Vol. 25, No. 2, pp. 584–594, 1990. DOI: 10.1109/4.53500.
D. J. Frank et al., “Device Scaling Limits of Si MOSFETs,” Proceedings of the IEEE, Vol. 89, No. 3, pp. 259–288, 2001. DOI: 10.1109/5.915374.
J. M. Rabaey, A. Chandrakasan, B. Nikolic, “Digital Integrated Circuits: A Design Perspective,” IEEE Press, Vol. 2, No. 1, pp. 1–750, 2003. DOI: 10.1109/9780470541337.
N. H. E. Weste, D. Harris, “CMOS VLSI Design,” Addison-Wesley, Vol. 4, No. 1, pp. 1–900, 2011. DOI: 10.5555/2434968.
S. Mutoh et al., “1-V Power Supply High-Speed Digital Circuit Technology,” IEEE Journal of Solid-State Circuits, Vol. 30, No. 8, pp. 847–854, 1995. DOI: 10.1109/4.400427.
A. Chandrakasan, S. Sheng, R. Brodersen, “Low-Power CMOS Digital Design,” IEEE Journal of Solid-State Circuits, Vol. 27, No. 4, pp. 473–484, 1992. DOI: 10.1109/4.126534.
Refbacks
- There are currently no refbacks.