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Study on Performance Analysis of CNTFET based Binary CAM Cell
Abstract
This work presents a Binary Content Addressable Memory (BCAM) cells using Carbon Nanotube Field Effect Transistor (CNTFET). To improve the performance of BCAM, adiabatic logic is used in the proposed designs. Lot of performance parameters like number of chirality vector, dielectric constant, number of CNT tubes, pitch and contact materials have been used to analyse the proposed memory design. All the performance analysis have been done for designing of the optimum BCAM cells which offers low power and high speed for different IC design applications. Simulation work carried out for proposed cells by varying all these parameters and it is evident that the proposed CNTFET based BCAM cells have shown the lot of improvement in transition delays and power consumption when compared to existing CMOS technology designs. All the proposed BCAM deigns shows the simulation results in terms of nano units whereas CMOS designs showing in micro units. All the simulations have done in HSpice at 32nm technology node.
References
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